Re-Annealing-Induced Recovery in 7nm Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Ferroelectric Film: Phase Transition and Non-Switchable Region Repair
نویسندگان
چکیده
To achieve HfO2-based ferroelectric (FE) devices with robust reliabilities, the impacts of re-annealing on 7nm FE-Hf $_{{0}.{5}}$ Zr0.5O2 (HZO) capacitors are comprehensively studied in this work. Impressively, re-initialization phenomenon can be clearly observed by cycled HZO capacitors. It is found that FE properties (remanent polarization (Pr), coercive electric field ( notation="LaTeX">$\text{E}_{\text {C}}{)}$ , switching speed, wakeup/fatigue effect, and symmetry) obviously improved after re-annealing. With in-depth discussions, it considered temperature-dependent phase transition non-switchable region repairing could dominant mechanisms. Our results indicate effectively improve FE-HZO performance shed light reliability optimizations.
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ژورنال
عنوان ژورنال: IEEE Electron Device Letters
سال: 2023
ISSN: ['1558-0563', '0741-3106']
DOI: https://doi.org/10.1109/led.2023.3287874